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Fabrication of cros...
Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET
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Lee, DongSu (författare)
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- Svensson, Johannes, 1978 (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)
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- Lee, SangWook (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)
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Park, YungWoo (författare)
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- Campbell, Eleanor E B, 1960 (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)
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(creator_code:org_t)
- American Scientific Publishers, 2006
- 2006
- Engelska.
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Ingår i: Journal of nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 0000-0000. ; 6, s. 1325-1330
- Relaterad länk:
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https://gup.ub.gu.se...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- carbon nanotubes
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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