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Nanoimprint-induced...
Nanoimprint-induced effects on electrical and optical properties of quantum well structures
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Zankovych, S (författare)
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Maximov, I (författare)
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- Shorubalko, Ivan (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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visa fler...
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Seekamp, J (författare)
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- Beck, Marc (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Romanov, S (författare)
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Reuter, D (författare)
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Schafmeister, P (författare)
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Wieck, AD (författare)
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Ahopelto, J (författare)
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Torres, CMS (författare)
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- Montelius, Lars (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 214-220
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As-InP and GaAs-Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- quantum transport
- nanoimprint lithography
- quantum wells
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Zankovych, S
-
Maximov, I
-
Shorubalko, Ivan
-
Seekamp, J
-
Beck, Marc
-
Romanov, S
-
visa fler...
-
Reuter, D
-
Schafmeister, P
-
Wieck, AD
-
Ahopelto, J
-
Torres, CMS
-
Montelius, Lars
-
visa färre...
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- NATURVETENSKAP
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NATURVETENSKAP
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Microelectronic ...
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Lunds universitet