Sökning: onr:"swepub:oai:lup.lub.lu.se:076ed1c9-e573-4779-a934-a6c4817ae792" >
Surface and core co...
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
-
- Persson, Karl-Magnus (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Malm, B. Gunnar (författare)
- KTH,Integrerade komponenter och kretsar
-
- Wernersson, Lars-Erik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
(creator_code:org_t)
- AIP Publishing, 2013
- 2013
- Engelska.
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:3
- Relaterad länk:
-
https://portal.resea... (primary) (free)
-
visa fler...
-
http://ieeexplore.ie...
-
http://dx.doi.org/10...
-
https://lup.lub.lu.s...
-
https://kth.diva-por... (primary) (Raw object)
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
Nyckelord
- Nanowire
- Noise
- mobility fluctuations
- number fluctutations
- InAs
- Transistor
- MOSFET
- FET
- high-k
- hf02
- al203
- Low-Frequency Noise
- Electrical Engineering
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas