1 volt CMOS Bluetooth front-end

• A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP1 is -16 dBm, and the IIP3 is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

conversion gain

power consumption

topology robustness

measurement correlation

input matching

maximum signal headroom

Bluetooth specification 1.0B

passive mixer

common-gate LNA

CMOS Bluetooth front-end

low IF device

noise figure

Bluetooth receiver

1 V

2.5 mW

5 dB

14 dB

0.25 micron

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)