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Epitaxial Graphene ...
Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1¯1¯1¯)
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- Shi, Yuchen (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten
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- Zakharov, Alexei A. (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,MAX IV Lab, Sweden
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- Ivanov, Ivan Gueorguiev (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten
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- Yazdi, Gholamreza (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten
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- Sun, Jianwu (författare)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- 2020-03-05
- 2020
- Engelska.
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Ingår i: Physica Status Solidi (B) Basic Research. - : Wiley. - 0370-1972 .- 1521-3951. ; 257:6
- Relaterad länk:
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron diffraction (μ-LEED) on the single graphene domain. The μ-LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C-face off-axis 3C-SiC((Formula presented.)).
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Nyckelord
- azimuthal orientations
- C-face 3C-SiC
- epitaxial graphene
- off-axis substrates
- azimuthal orientations; C-face 3C-SiC; epitaxial graphene; off-axis substrates
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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