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Domain-wall contrib...
Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer
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Wosinski, T. (författare)
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Figielski, T. (författare)
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Pelya, O. (författare)
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Makosa, A. (författare)
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Morawski, A. (författare)
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- Sadowski, Janusz (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Dobrowolski, W. (författare)
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Szymczak, R. (författare)
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Wrobel, J. (författare)
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(creator_code:org_t)
- Wiley, 2007
- 2007
- Engelska.
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Ingår i: Physica Status Solidi. A, Applied Research. - : Wiley. - 0031-8965. ; 204:2, s. 472-476
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
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