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Evidence for captur...
Evidence for capture of holes into resonant states in boron-doped silicon
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Yen, ST (författare)
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Tulupenko, VN (författare)
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Cheng, ES (författare)
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Chung, PK (författare)
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Lee, CP (författare)
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Dalakyan, AT (författare)
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- Chao, Koung-An (författare)
- Lund University,Lunds universitet,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- AIP Publishing, 2004
- 2004
- Engelska.
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Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 96:9, s. 4970-4975
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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