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Confinement propert...
Confinement properties of a Ga0.25In0.75As/InP quantum point contact
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Martin, T P (författare)
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Marlow, C A (författare)
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- Samuelson, Lars (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Hamilton, A R (författare)
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Linke, H (författare)
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Taylor, R P (författare)
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(creator_code:org_t)
- 2008
- 2008
- Engelska.
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 77:15, s. 5-155309
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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