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Direct observation ...
Direct observation of structural relaxation in amorphous compound semiconductors
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Azevedo, GD (författare)
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- Glover, Chris (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Yu, KM (författare)
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Foran, GJ (författare)
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Ridgway, MC (författare)
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 206, s. 1024-1027
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- amorphous solids
- ion implantation
- InAs
- EXAFS
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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