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A novel frequency-m...
A novel frequency-multiplication device based on three-terminal ballistic junction
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- Shorubalko, Ivan (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Xu, Hongqi (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Maximov, Ivan (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Nilsson, D (författare)
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- Omling, Pär (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Samuelson, Lars (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Seifert, Werner (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 23:7, s. 377-379
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- three-terminal ballistic
- ballistic devices
- frequency-multiplication
- junctions
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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