Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy

Hirasaki, TakahideTokyo University of Agriculture and Technology, Japan (författare)

The influence of NH3 input partial pressure on N-polarity InGaN grown by tri-halide vapor phase epitaxy was investigated. It was found that surface morphology, solid composition and optical properties were affected by NH3 input partial pressure. As shown in thermodynamic analyses, the indium content increased due to an increase in the driving force for InN deposition caused by increased NH3 input partial pressure. In addition, the deep level emission around 2.1 eV in photoluminescence measurements drastically decreased at higher NH3 input partial pressures. Ab initio calculations and subsequent secondary ion mass spectrometry measurements suggested the reduction of metal-vacancies and/or carbon impurity incorporation in the InGaN layers. (C) 2016 The Japan Society of Applied Physics

Hasegawa, TomoyasuTokyo University of Agriculture and Technology, Japan (författare)
Meguro, MisakiTokyo University of Agriculture and Technology, Japan (författare)
Thieu, Quang TuTokyo University of Agriculture and Technology, Japan (författare)
Murakami, HisashiTokyo University of Agriculture and Technology, Japan (författare)
Kumagai, YoshinaoTokyo University of Agriculture and Technology, Japan (författare)
Monemar, BoLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Tokyo University of Agriculture and Technology, Japan(Swepub:liu)bomo46 (författare)
Koukitu, AkinoriTokyo University of Agriculture and Technology, Japan (författare)
Tokyo University of Agriculture and Technology, JapanHalvledarmaterial (creator_code:org_t)

Ingår i:Japanese Journal of Applied Physics: IOP PUBLISHING LTD55:5, s. 05FA01-0021-49221347-4065

Av författaren/redakt...: Hirasaki, Takahi ...; Hasegawa, Tomoya ...; Meguro, Misaki; Thieu, Quang Tu; Murakami, Hisash ...; Kumagai, Yoshina ...; visa fler...; Monemar, Bo; Koukitu, Akinori; visa färre...

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