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Intracavity double ...
Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling
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- Tiira, Jonna (författare)
- Aalto University
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- Radevici, Ivan (författare)
- Aalto University
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- Haggren, Tuomas (författare)
- Aalto University
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- Hakkarainen, Teemu (författare)
- Tampere University of Technology
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- Kivisaari, Pyry (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Lyytikäinen, Jari (författare)
- Tampere University of Technology
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- Aho, Arto (författare)
- Tampere University of Technology
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- Tukiainen, Antti (författare)
- Tampere University of Technology
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- Guina, Mircea (författare)
- Tampere University of Technology
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- Oksanen, Jani (författare)
- Aalto University
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(creator_code:org_t)
- SPIE, 2017
- 2017
- Engelska.
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Ingår i: Optical and Electronic Cooling of Solids II. - : SPIE. - 9781510606838 ; 10121
- Relaterad länk:
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http://dx.doi.org/10...
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https://aaltodoc.aal...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV-measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- double diode structures
- electroluminescent cooling
- III-V semiconductors
- quantum efficiency
- radiative and non-radiative recombination
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- kon (ämneskategori)
- ref (ämneskategori)
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Till lärosätets databas
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Tiira, Jonna
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Radevici, Ivan
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Haggren, Tuomas
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Hakkarainen, Tee ...
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Kivisaari, Pyry
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Lyytikäinen, Jar ...
-
visa fler...
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Aho, Arto
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Tukiainen, Antti
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Guina, Mircea
-
Oksanen, Jani
-
visa färre...
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- NATURVETENSKAP
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Optical and Elec ...
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Lunds universitet