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TEM determination o...
TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates
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Dluzewski, P. (författare)
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- Sadowski, Janusz (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Kret, S. (författare)
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Dabrowski, J. (författare)
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Sobczak, K. (författare)
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(creator_code:org_t)
- 2009-10-22
- 2009
- Engelska.
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Ingår i: Journal of Microscopy. - : Wiley. - 0022-2720. ; 236:2, s. 115-118
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- TEM
- nanowires
- GaMnAs
- MBE
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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