Sökning: onr:"swepub:oai:lup.lub.lu.se:bde6e8dd-1e0e-49ef-aeca-233de69a92fb" >
Quasifreestanding s...
Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
-
Usachov, D. (författare)
-
Adamchuk, V. K. (författare)
-
Haberer, D. (författare)
-
visa fler...
-
Grueneis, A. (författare)
-
Sachdev, H. (författare)
-
- Preobrajenski, Alexei (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
-
Laubschat, C. (författare)
-
Vyalikh, D. V. (författare)
-
visa färre...
-
(creator_code:org_t)
- 2010
- 2010
- Engelska.
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 82:7
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas