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Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices

Aïssa, B. (författare)
Qatar Energy and Environment Research Institute (QEERI)
Ali, A. (författare)
Qatar Energy and Environment Research Institute (QEERI)
Bentouaf, A. (författare)
Djillali Liabes University
visa fler...
Khan, W. (författare)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Hossain, M. I. (författare)
Qatar Energy and Environment Research Institute (QEERI)
Kroeger, J. (författare)
Raymor Industries Inc.
Malik Muhammad, N. (författare)
University Of Brunei Darussalam
visa färre...
 (creator_code:org_t)
2019-11-20
2020
Engelska.
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:7
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
Stäng  
  • We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I on /I off ratio of 104 and a maximum on-state current (I on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm2 V-1 s-1. Finally, under light illumination, the transfer characteristics (i.e. I DS as a function of V GS) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Carbon nanotube
memory effect
mobility
poly (3 hexylthiophene)
thin-film transistor

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