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Dual-gate induced I...
Dual-gate induced InP nanowire diode
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- Storm, Kristian (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Nylund, Gustav (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Borgström, Magnus (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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visa fler...
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- Wallentin, Jesper (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Fasth, Carina (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Thelander, Claes (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Samuelson, Lars (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- AIP, 2011
- 2011
- Engelska.
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Ingår i: Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. - : AIP. - 1551-7616 .- 0094-243X. ; 1399, s. 279-280
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Fermi level tuning
- InP
- wrap-gate
- nanowire
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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