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Structural characte...
Structural characterization of amorphised InAs with synchrotron radiation
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Azevedo, GD (författare)
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Ridgway, MC (författare)
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Yu, KM (författare)
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- Glover, Chris (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Foran, GJ (författare)
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(creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 190, s. 851-855
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Walter factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- InAs
- amorphous solids
- ion implantation
- EXAFS
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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