Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

• Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

aluminium compounds

indium compounds

semiconductor quantum dots

III-V semiconductors

semiconductor epitaxial layers

molecular beam epitaxial growth

semiconductor growth

gallium arsenide

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