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Molecular Bridges L...
Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown
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- Ranjan, Alok, 1992 (författare)
- Singapore University of Technology and Design,Chalmers tekniska högskola,Chalmers University of Technology
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O'Shea, Sean J. (författare)
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- Padovani, Andrea (författare)
- Universita Degli Studi Di Modena E Reggio Emilia,University of Modena and Reggio Emilia
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- Su, Tong (författare)
- Singapore University of Technology and Design
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- La Torraca, Paolo (författare)
- Universita Degli Studi Di Modena E Reggio Emilia,University of Modena and Reggio Emilia
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- Ang, Yee Sin (författare)
- Singapore University of Technology and Design
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- Munde, Manveer Singh (författare)
- Philipps-Universität Marburg,Philipps University Marburg
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- Zhang, Chenhui (författare)
- King Abdullah University of Science and Technology (KAUST)
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- Zhang, Xixiang (författare)
- King Abdullah University of Science and Technology (KAUST)
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- Bosman, Michel (författare)
- Universiti Kebangsaan Singapura (NUS),National University of Singapore (NUS)
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- Raghavan, Nagarajan (författare)
- Singapore University of Technology and Design
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- Pey, Kin Leong (författare)
- Singapore University of Technology and Design
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(creator_code:org_t)
- 2023-02-09
- 2023
- Engelska.
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 5:2, s. 1262-1276
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https://research.cha... (primary) (free)
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- We use conduction atomic force microscopy (CAFM) to examine the soft breakdown of monocrystalline hexagonal boron nitride (h-BN) and relate the observations to the defect generation and dielectric degradation in the h-BN by charge transport simulations and density functional theory (DFT) calculations. A modified CAFM approach is adopted, whereby 500 × 500 nm2 to 3 × 3 μm2 sized metal/h-BN/metal capacitors are fabricated on 7 to 19 nm-thick h-BN crystal flakes and the CAFM tip is placed on top of the capacitor as an electrical probe. Current-voltage (I-V) sweeps and time-dependent dielectric breakdown measurements indicate that defects are generated gradually over time, leading to a progressive increase in current prior to dielectric breakdown. Typical leakage currents are around 0.3 A/cm2 at a 10 MV/cm applied field. DFT calculations indicate that many types of defects could be generated and contribute to the leakage current. However, three defects created from adjacent boron and nitrogen monovacancies exhibit the lowest formation energy. These three defects form molecular bridges between two adjacent h-BN layers, which in turn "electrically shorts"the two layers at the defect location. Electrical shorting between layers is manifested in charge transport simulations, which show that the I-V data can only be correctly modeled by incorporating a decrease in effective electrical thickness of the h-BN as well as the usual increase in trap density, which, alone, cannot explain the experimental data. An alternative breakdown mechanism, namely, the physical removal of h-BN layers under soft breakdown, appears unlikely given the h-BN is mechanically confined by the electrodes and no change in AFM topography is observed after breakdown. High-resolution transmission electron microscope micrographs of the breakdown location show a highly localized (<1 nm) breakdown path extending between the two electrodes, with the h-BN layers fractured and disrupted, but not removed.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- conduction AFM
- h-BN
- gate dielectric
- and reliability
- 2D layer breakdown
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- art (ämneskategori)
- ref (ämneskategori)
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Ranjan, Alok, 19 ...
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O'Shea, Sean J.
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Padovani, Andrea
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Su, Tong
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La Torraca, Paol ...
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Ang, Yee Sin
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visa fler...
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Munde, Manveer S ...
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Zhang, Chenhui
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Zhang, Xixiang
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Bosman, Michel
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Raghavan, Nagara ...
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Pey, Kin Leong
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visa färre...
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