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Hydrophobic low tem...
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Amirfeiz, Petra,1973Chalmers tekniska högskola,Chalmers University of Technology
(författare)
Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
- Artikel/kapitelEngelska2003
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LIBRIS-ID:oai:research.chalmers.se:22e59963-30b7-4145-9591-0b2615d1baca
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https://research.chalmers.se/publication/17798URI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:kon swepub-publicationtype
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Ämneskategori:ref swepub-contenttype
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The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Sanz-Velasco, Anke,1971Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)ankesanz
(författare)
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Bengtsson, Stefan,1961Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stefanb
(författare)
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Chalmers tekniska högskola
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding19, s. 267-
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