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SPFM pre-cleaning f...
SPFM pre-cleaning for formation of silicon interfaces by wafer bonding
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- Bengtsson, Stefan, 1961 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Ljungberg, Karin (författare)
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(creator_code:org_t)
- 1997
- 1997
- Engelska.
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Ingår i: Science and Technology of Semiconductor Surface Preparation. Symposium. ; , s. 267-
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
Stäng
- The use of H2SO4-H2O2-HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si-Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs. voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si-Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- integrated circuit technology
- wafer bonding
- silicon
- surface cleaning
- elemental semiconductors
- integrated circuit testing
- electric current
- semiconductor junctions
- electric resistance
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)