Sökning: onr:"swepub:oai:research.chalmers.se:2fc5f91f-c9bf-4b6f-b9ba-bcfe5caad84f" >
Efficient heterogen...
Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
-
- Jin, Tingting (författare)
- Chinese Academy of Sciences
-
- Lin, Jiajie (författare)
- Jiaxing University
-
- You, Tiangui (författare)
- Chinese Academy of Sciences
-
visa fler...
-
- Zhang, Xiaolei (författare)
- ShanghaiTech University,Chinese Academy of Sciences
-
- Liang, Hao (författare)
- Chinese Academy of Sciences
-
- Zhu, Yifan (författare)
- Chinese Academy of Sciences
-
- Sun, Jialiang (författare)
- Chinese Academy of Sciences
-
- Shi, Hangning (författare)
- Chinese Academy of Sciences
-
- Chi, Chaodan (författare)
- Chinese Academy of Sciences
-
- Zhou, Min (författare)
- Chinese Academy of Sciences
-
- Kudrawiec, R (författare)
- Politechnika Wrocławska,Wrocław University of Science and Technology
-
- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Ou, Xin (författare)
- Chinese Academy of Sciences
-
visa färre...
-
(creator_code:org_t)
- 2022-06-27
- 2022
- Engelska.
-
Ingår i: Science China Information Sciences. - : Springer Science and Business Media LLC. - 1869-1919 .- 1674-733X. ; 65:8
- Relaterad länk:
-
https://doi.org/10.1...
-
visa fler...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- GaSb/Si
- ion-slicing technique
- InP/Si
- heterogeneous integration
- selective chemical etching
- MBE
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas
- Av författaren/redakt...
-
Jin, Tingting
-
Lin, Jiajie
-
You, Tiangui
-
Zhang, Xiaolei
-
Liang, Hao
-
Zhu, Yifan
-
visa fler...
-
Sun, Jialiang
-
Shi, Hangning
-
Chi, Chaodan
-
Zhou, Min
-
Kudrawiec, R
-
Wang, Shu Min, 1 ...
-
Ou, Xin
-
visa färre...
- Om ämnet
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Kemi
-
och Materialkemi
-
- TEKNIK OCH TEKNOLOGIER
-
TEKNIK OCH TEKNO ...
-
och Materialteknik
-
och Annan materialte ...
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Fysik
-
och Den kondenserade ...
- Artiklar i publikationen
-
Science China In ...
- Av lärosätet
-
Chalmers tekniska högskola