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Wafer-scale heterog...
Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
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- Lin, Jiajie (författare)
- Chinese Academy of Sciences
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- You, Tiangui (författare)
- Chinese Academy of Sciences
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- Jin, Tingting (författare)
- Chinese Academy of Sciences
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- Liang, Hao (författare)
- Chinese Academy of Sciences
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- Wan, Wenjian (författare)
- Chinese Academy of Sciences
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- Huang, Hao (författare)
- University of Shanghai for Science and Technology,Chinese Academy of Sciences
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- Zhou, Min (författare)
- Chinese Academy of Sciences
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- Mu, Fengwen (författare)
- Waseda University
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- Yan, Youquan (författare)
- Chinese Academy of Sciences
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- Huang, Kai (författare)
- Chinese Academy of Sciences
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- Zhao, Xiaomeng (författare)
- Chinese Academy of Sciences
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- Zhang, Jiaxiang (författare)
- Chinese Academy of Sciences
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- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Gao, Peng (författare)
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- Ou, Xin (författare)
- Chinese Academy of Sciences
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(creator_code:org_t)
- AIP Publishing, 2020
- 2020
- Engelska.
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 8:5
- Relaterad länk:
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https://research.cha... (primary) (free)
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https://aip.scitatio...
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https://doi.org/10.1...
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https://research.cha...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP-Si bonding are similar to those in Si-Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs' spacing, and moreover, the relationship between bubble formation and the LOT's structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.
Ämnesord
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Lin, Jiajie
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You, Tiangui
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Jin, Tingting
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Liang, Hao
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Wan, Wenjian
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Huang, Hao
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Zhou, Min
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Mu, Fengwen
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Yan, Youquan
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Huang, Kai
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Zhao, Xiaomeng
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Zhang, Jiaxiang
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Wang, Shu Min, 1 ...
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Gao, Peng
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Ou, Xin
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- Om ämnet
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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och Oorganisk kemi
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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och Materialkemi
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
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APL Materials
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Chalmers tekniska högskola