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Decade bandwidth hi...
Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading
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- Andersson, Christer, 1982 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Moon, J. (författare)
- Pohang University of Science and Technology
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- Fager, Christian, 1974 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kim, B. (författare)
- Pohang University of Science and Technology
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9781467310871
- 2012
- 2012
- Engelska.
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
- Relaterad länk:
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- The use of resistive loading at higher harmonics in wideband power amplifier design is proposed. Although the theoretical efficiency of such operation is lower than other classes the significantly simplified load network design potentially allows for multi-octave realizations. A decade bandwidth (0.4-4.1 GHz) GaN HEMT power amplifier was thereby designed, delivering more than 40 dBm output power with 10-15 dB gain and 40-62% drain efficiency. Linearized modulated signal amplification was then successfully demonstrated at multiple frequencies (0.9 to 3.5 GHz), using various downlink signals (LTE, WCDMA, WiMAX), with resulting ACLR lower than 46 dBc.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Broadband amplifiers
- Power amplifiers
- Wideband
- Gallium nitride
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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