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High frequency loss...
High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding
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- Johansson, Mikael (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bergh, Mats, 1968 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 1999
- 1999
- Engelska.
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Ingår i: 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345). ; , s. 30-
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http://dx.doi.org/10...
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Abstract
Ämnesord
Stäng
- Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- SIMOX
- interface structure
- elemental semiconductors
- high-frequency transmission lines
- etching
- space charge
- integrated circuit measurement
- microwave integrated circuits
- integrated circuit interconnections
- integrated circuit metallisation
- interface states
- silicon
- wafer bonding
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)