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Comparative Optical...
Comparative Optical Studies of InGaAs/GaAs Quantum Wells Grown by MBE on (100) and (311)A GaAs Planes
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- Khatab, A. (författare)
- Cairo University,University Of Nottingham
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- Shafi, M. (författare)
- University Of Nottingham
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- Mari, R.H. (författare)
- University Of Nottingham,University of Sindh
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- Aziz, M. (författare)
- University Of Nottingham
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- Henini, M. (författare)
- University Of Nottingham
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Patriarche, G. (författare)
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- Troadec, D. (författare)
- IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
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- Sadeghi, Mahdad, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2012-05-29
- 2012
- Engelska.
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Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 9:7, s. 1621-1623
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- The temperature dependence of the optical properties of InGaAs/GaAs double quantum wells (QWs) grown by molecular beam epitaxy (MBE) on (100) and (311)A GaAs substrates has been studied by photoluminescence (PL). It is found that for an excitation of 50 mW, the PL quenching for (100) and (311)A QWs occurs at 220 K and 300 K, respectively. This suggests that the high index plane (311)A has superior structural properties and less non-radiative defect centers than the conventional (100) plane. The better optical quality of the QWs grown on (311)A is also confirmed by the narrowing of the full width at half-maximum (FWHM) of the PL emission: 10 nm for (311)A and 20 nm for (100). From these findings it is expected that optical devices grown on (311)A GaAs planes should have better performances than those grown on conventional (100) orientation. We have also carried out a systematic study to investigate the effect of post-growth thermal annealing on the optical quality of the QWs. We observed a substantial improvement of the PL efficiency with annealing temperatures in the range 500-700 C for all samples. However, this PL enhancement is accompanied by a blueshift. These energy shifts can be explained by interdiffusion or intermixing of In and Ga atoms at the interfaces between the QWs and the barriers. A noticeable narrowing of the PL linewidth with higher annealing temperatures could be explained by a homogenisation of the quantum well interfaces.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- transmission electron microscopy
- molecular beam epitaxy
- quantum well
- high index plane
- photoluminescence
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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Till lärosätets databas
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Khatab, A.
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Shafi, M.
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Mari, R.H.
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Aziz, M.
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Henini, M.
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Patriarche, G.
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visa fler...
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Troadec, D.
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Sadeghi, Mahdad, ...
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Wang, Shu Min, 1 ...
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visa färre...
- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Elektroteknik oc ...
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Nanoteknik
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Physica Status S ...
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Chalmers tekniska högskola