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Spin-Polarized Tunn...
Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
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- Dankert, André, 1986 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden.
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- Pashaei, Parham (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden.,Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA.;Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA.;Iowa State Univ, Mech Engn Dept, Ames, IA 50011 USA.,Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands.,University of Puerto Rico,Iowa State University
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- Mutta, Venkata Kamalakar, 1979 (författare)
- Uppsala universitet,Molekyl- och kondenserade materiens fysik,Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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- Gaur, A.P.S. (författare)
- University of Puerto Rico,Iowa State University,Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA.;Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA.;Inst Phys, Bhubaneswar 751005, Odisha, India.,Trinity Coll Dublin, AMBER & CRANN Inst, Sch Phys, Dublin 2, Ireland.,Trinity College Dublin, the University of Dublin
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- Dash, Saroj Prasad, 1975 (författare)
- University of Puerto Rico,Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA.;Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA.,Birla Institute of Technology and Science Pilani,Chalmers tekniska högskola,Chalmers University of Technology
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- Rungger, I. (författare)
- National Physical Laboratory (NPL),Natl Phys Lab, Teddington TW11 0LW, Middx, England.
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- Narayan, A. (författare)
- Eidgenössische Technische Hochschule Zürich (ETH),Swiss Federal Institute of Technology in Zürich (ETH),Trinity College Dublin, the University of Dublin,Trinity Coll Dublin, AMBER & CRANN Inst, Sch Phys, Dublin 2, Ireland.;Swiss Fed Inst Technol, Mat Theory, Wolfgang Pauli Str 27, CH-8093 Zurich, Switzerland.
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- Dolui, K. (författare)
- University of Delaware,Trinity College Dublin, the University of Dublin,Trinity Coll Dublin, AMBER & CRANN Inst, Sch Phys, Dublin 2, Ireland.;Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA.
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- Hoque, Anamul Md, 1988 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden.
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- Patel, R.S. (författare)
- Birla Institute of Technology and Science Pilani,Birla Inst Technol & Sci, Dept Phys, Pilani KK Birla Goa Campus, Zuarinagar 403726, Goa, India.
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De Jong, M.P. (författare)
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- Katiyar, R.S. (författare)
- University of Puerto Rico
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- Sanvito, S. (författare)
- Trinity College Dublin, the University of Dublin
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- Dash, Saroj Prasad, 1975 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Chalmers tekniska högskola Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden (creator_code:org_t)
- 2017-05-30
- 2017
- Engelska.
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 11:6, s. 6389-6395
- Relaterad länk:
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http://arxiv.org/pdf...
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https://research.cha...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- density functional theory
- spin-polarized tunneling
- 2D semiconductor
- multilayer MoS2
- tunnel magnetoresistance
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Dankert, André, ...
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Pashaei, Parham
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Mutta, Venkata K ...
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Gaur, A.P.S.
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Dash, Saroj Pras ...
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Rungger, I.
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Narayan, A.
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Dolui, K.
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Hoque, Anamul Md ...
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Patel, R.S.
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De Jong, M.P.
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Katiyar, R.S.
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Sanvito, S.
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