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A GaN-SiC hybrid ma...
A GaN-SiC hybrid material for high-frequency and power electronics
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- Chen, J. T. (författare)
- SweGaN AB, Teknikringen 8D, Linköping, Sweden
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- Bergsten, Johan, 1988 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
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- Lu, Jun (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Janzén, Erik (författare)
- SweGaN AB, Teknikringen 8D, Linköping, Sweden
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- Thorsell, Mattias, 1982 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
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- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
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- Kordina, O. (författare)
- SweGaN AB, Teknikringen 8D, Linköping, Sweden
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(creator_code:org_t)
- AIP Publishing, 2018
- 2018
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 113:4
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Abstract
Ämnesord
Stäng
- We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001) substrates can be accommodated without triggering extended defects over large areas using a grain-boundary-free AlN nucleation layer (NL). Defect formation in the initial epitaxial growth phase is thus significantly alleviated, confirmed by various characterization techniques. As a result, a high-quality 0.2-μm thin GaN layer can be grown on the AlN NL and directly serve as a channel layer in power devices, like high electron mobility transistors (HEMTs). The channel electrons exhibit a state-of-the-art mobility of >2000 cm2/V-s, in the AlGaN/GaN heterostructures without a conventional thick C- or Fe-doped buffer layer. The highly scaled transistor processed on the heterostructure with a nearly perfect GaN-SiC interface shows excellent DC and microwave performances. A peak RF power density of 5.8 W/mm was obtained at VDSQ= 40 V and a fundamental frequency of 30 GHz. Moreover, an unpassivated 0.2-μm GaN/AlN/SiC stack shows lateral and vertical breakdowns at 1.5 kV. Perfecting the GaN-SiC interface enables a GaN-SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC, which promises further advances in a wide spectrum of high-frequency and power electronics.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Till lärosätets databas
- Av författaren/redakt...
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Chen, J. T.
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Bergsten, Johan, ...
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Lu, Jun
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Janzén, Erik
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Thorsell, Mattia ...
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Hultman, Lars
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visa fler...
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Rorsman, Niklas, ...
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Kordina, O.
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visa färre...
- Om ämnet
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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och Materialkemi
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Materialteknik
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och Annan materialte ...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
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Applied Physics ...
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Chalmers tekniska högskola
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Linköpings universitet