Sökning: onr:"swepub:oai:research.chalmers.se:69e5a908-ce8a-4d0f-aa1e-e57354e0662e" >
Schottky barriers o...
Schottky barriers on silicon nanowires influenced by charge configuration
-
- Piscator, Johan, 1977 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Engström, Olof, 1943 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
(creator_code:org_t)
- 2008
- 2008
- Engelska.
-
Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 104:5, s. 054515-
- Relaterad länk:
-
https://research.cha...
Abstract
Ämnesord
Stäng
- Due to the geometry offered by nanowires, it is possible to introduce electric fields directed from the wire wall toward a Schottky contact positioned on the end surface of a wire. In the present work a simple model demonstrating the effect of charge on the wire walls close to the metal semiconductor interface is presented. This is also compared to measurements on fabricated nanowire devices, showing that additional positive charge close to the interface will lower the effective Schottky barrier height.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- elemental semiconductors
- silicon
- nanowires
- semiconductor-metal boundaries
- Schottky barriers
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas