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Nanochannel diodes ...
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Westlund, Andreas,1985Chalmers tekniska högskola,Chalmers University of Technology
(författare)
Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties
- Artikel/kapitelEngelska2015
Förlag, utgivningsår, omfång ...
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American Vacuum Society,2015
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electronicrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:research.chalmers.se:7c59b3ee-c2af-4309-b2f7-afed63db2c77
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https://doi.org/10.1116/1.4914314DOI
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https://research.chalmers.se/publication/214620URI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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Ämneskategori:ref swepub-contenttype
Anmärkningar
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The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al80Ga20Sb heterostructures. The process is demonstrated by processing InAs/Al80Ga20Sb self-switching diodes (SSDs). SSDs require high-resolution isolation patterns, which presents a major fabrication challenge because of the oxidation sensitivity of Al(Ga)Sb alloys. The presented fabrication process completely avoided exposure of Al(Ga)Sb to air and resulted in an isolation pattern with a feature size down to 35 nm. The process was based on a dry etch of isolating trenches, in situ removal of the resist etch mask followed by in situ encapsulation of etched surfaces by silicon nitride. The applicability of the InAs/Al80Ga20Sb SSD process was demonstrated with on-wafer RF measurements of zero-bias detection up to 315 GHz. Below 50 GHz, the detector's noise equivalent power was estimated to less than 100 pW/Hz½ .
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Nilsson, Per-Åke,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)pernilss
(författare)
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Sangaré, P.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
(författare)
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Ducournau, G.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
(författare)
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Gaquière, C.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
(författare)
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Desplanque, L.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
(författare)
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Wallart, X.Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
(författare)
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Grahn, Jan,1962Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jagr
(författare)
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Chalmers tekniska högskolaLille I: Universite des Sciences et Technologies de Lille (USTL)
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics: American Vacuum Society33:2, s. 021207-2166-27462166-2754
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