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Nanochannel diodes ...
Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties
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- Westlund, Andreas, 1985 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Nilsson, Per-Åke, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sangaré, P. (författare)
- Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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- Ducournau, G. (författare)
- Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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- Gaquière, C. (författare)
- Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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- Desplanque, L. (författare)
- Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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- Wallart, X. (författare)
- Lille I: Universite des Sciences et Technologies de Lille (USTL),Lille 1 University of Science and Technology (USTL)
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- Grahn, Jan, 1962 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- American Vacuum Society, 2015
- 2015
- Engelska.
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Ingår i: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. - : American Vacuum Society. - 2166-2746 .- 2166-2754. ; 33:2, s. 021207-
- Relaterad länk:
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al80Ga20Sb heterostructures. The process is demonstrated by processing InAs/Al80Ga20Sb self-switching diodes (SSDs). SSDs require high-resolution isolation patterns, which presents a major fabrication challenge because of the oxidation sensitivity of Al(Ga)Sb alloys. The presented fabrication process completely avoided exposure of Al(Ga)Sb to air and resulted in an isolation pattern with a feature size down to 35 nm. The process was based on a dry etch of isolating trenches, in situ removal of the resist etch mask followed by in situ encapsulation of etched surfaces by silicon nitride. The applicability of the InAs/Al80Ga20Sb SSD process was demonstrated with on-wafer RF measurements of zero-bias detection up to 315 GHz. Below 50 GHz, the detector's noise equivalent power was estimated to less than 100 pW/Hz½ .
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- art (ämneskategori)
- ref (ämneskategori)
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