A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation

In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.

Raffo, A.University of Ferrara (författare)
Angelov, Iltcho,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)iltcho (författare)
Crupi, G.Universita degli Studi di Messina,University of Messina (författare)
Vannini, G.University of Ferrara (författare)
Schreurs, DmmpKatholieke Universiteit Leuven (författare)
Katholieke Universiteit LeuvenUniversity of Ferrara (creator_code:org_t)

Ingår i:IEEE MTT-S International Microwave Symposium Digest, s. Art. no. 6697394-0149-645X9781467361767

Av författaren/redakt...: Avolio, G.; Raffo, A.; Angelov, Iltcho, ...; Crupi, G.; Vannini, G.; Schreurs, Dmmp

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