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Growth of GaSb1-xBi...
Growth of GaSb1-xBix by molecular beam epitaxy
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- Song, Yuxin, 1981 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Roy, Ivy Saha (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Shi, Peixiong (författare)
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- Hallén, Anders (författare)
- KTH,Integrerade komponenter och kretsar
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Wang, Shumin (författare)
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(creator_code:org_t)
- American Vacuum Society, 2012
- 2012
- Engelska.
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Ingår i: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. - : American Vacuum Society. - 2166-2754 .- 2166-2746. ; 30:2, s. 02B114-
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- bismuth alloys
- Rutherford backscattering
- silicon alloys
- gallium alloys
- secondary ion mass spectra
- molecular beam epitaxial growth
- X-ray diffraction
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- art (ämneskategori)
- ref (ämneskategori)
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