Sökning: onr:"swepub:oai:research.chalmers.se:b115c408-8b90-4e22-93c6-f7c1a1eafa40" >
Shallow-terrace-lik...
Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
-
- Chen, X (författare)
- Chinese Academy of Sciences
-
- Song, Yuxin, 1981 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Zhu, Liang (författare)
- Chinese Academy of Sciences
-
visa fler...
-
- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Lu, Wei (författare)
- Chinese Academy of Sciences
-
- Guo, Shaoling (författare)
- Chinese Academy of Sciences
-
- Shao, Jun (författare)
- Chinese Academy of Sciences
-
visa färre...
-
(creator_code:org_t)
- AIP Publishing, 2013
- 2013
- Engelska.
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:15, s. 153505-153507
- Relaterad länk:
-
http://publications.... (primary) (free)
-
visa fler...
-
http://publications....
-
https://research.cha...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Photoluminescence (PL) measurements are performed on one GaSb/AlGaSb single-quantum-well (SQW) sample and two dilute-bismuth (Bi) GaSb/AlGaSb SQW samples grown at 360 and 380 °C, at low temperatures and under magnetic fields. Bimodal PL features are identified in the dilute-Bi samples, and to be accompanied by abnormal PL blueshift in the sample grown at 360 °C. The bimodal PL features are found to be from similar origins of band-to-band transition by magneto-PL evolution. Analysis indicates that the phenomenon can be well interpreted by the joint effect of interfacial large-lateral-scale islands and Al/Ga interdiffusion due to Bi incorporation. The interdiffusion introduces about 1-monolayer shrinkage to the effective quantum-well thickness, which is similar to the interfacial islands height, and the both together result in an unusual shallow-terrace-like interface between GaSbBi and AlGaSb. A phenomenological model is established, the Bi content of isoelectronic incorporation and the exciton reduced effective mass are estimated for the GaSbBi sample grown at 380 °C, and a value of about 21 meV/% is suggested for the bandgap bowing rate of GaSbBi. An effective routine is suggested for determining the Bi content and the depth of the shallow-terraces at interface in dilute-Bi SQW structures.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- dilute bismide
- photoluminescence
- GaSbBi
- quantum well
- interface
- MBE
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas