Sökning: onr:"swepub:oai:research.chalmers.se:b5fb7527-4530-4774-9d2a-bf16e6b274d1" >
Resistive SiC-MESFE...
Resistive SiC-MESFET mixer
-
- Andersson, Kristoffer, 1976 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Eriksson, Joakim, 1969 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
visa fler...
-
- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
visa färre...
-
(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2002
- 2002
- Engelska.
-
Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1531-1309 .- 1558-1764. ; 12:4, s. 119-121
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://doi.org/10.1...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Electric resistance
- Frequency converters
- Frequency modulation
- MESFET devices
- Energy gap
- Silicon carbide
- Bandpass filters
- Computer simulation
- Electric conductivity
- Mixer circuits
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas