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Controlling In-Ga-Z...
Controlling In-Ga-Zn-O thin films transport properties through density changes
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Kaczmarski, J. (författare)
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- Boll, Torben, 1979 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Borysiewicz, M. A. (författare)
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visa fler...
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- Taube, A. (författare)
- Politechnika Warszawska,Warsaw University of Technology
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- Thuvander, Mattias, 1968 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Law, Jiayan, 1984 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Kaminska, E. (författare)
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- Stiller, Krystyna Marta, 1947 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Elsevier BV, 2016
- 2016
- Engelska.
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 608, s. 57-61
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- In the following study we investigate the effect of the magnetron cathode current (I-c) during reactive sputtering of In-Ga-Zn-O (a-IGZO) on thin-films nanostructure and transport properties. All fabricated films are amorphous, according to X-ray diffraction measurements. However, High Resolution Transmission Electron Microscopy revealed the a-IGZO fabricated at I-C = 70 mA to contain randomly-oriented nanocrystals dispersed in amorphous matrix, which disappear in films deposited at higher cathode current. These nanocrystals have the same composition as the amorphous matrix. One can observe that, while I-C is increased from 70 to 150 mA, the carrier mobility improves from mu(Hall) = 6.9 cm(2)/Vs to mu(Hall) = 9.1 cm(2)/Vs. Additionally, the increase of I-C caused a reduction of the depletion region trap states density of the Ru-Si-O/In-Ga-Zn-O Schottky barrier. This enhancement in transport properties is attributed to the greater overlapping of s-orbitals of the film-forming cations caused by increased density, evidenced by X-ray reflectivity, at a fixed chemical composition, regardless nanostructure of thin films. (C) 2016 Elsevier B.V. All rights reserved.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- In-Ga-Zn-O
- Schottky contacts
- Amorphous oxide semiconductors
- IGZO
- Atom Probe Tomography
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Kaczmarski, J.
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Boll, Torben, 19 ...
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Borysiewicz, M. ...
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Taube, A.
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Thuvander, Matti ...
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Law, Jiayan, 198 ...
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visa fler...
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Kaminska, E.
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Stiller, Krystyn ...
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visa färre...
- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Materialteknik
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
- Artiklar i publikationen
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Thin Solid Films
- Av lärosätet
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Chalmers tekniska högskola