Sökning: onr:"swepub:oai:research.chalmers.se:c1aa5b5c-af25-4540-ba03-96da85374f55" >
Growth of metamorph...
Growth of metamorphic InGaP layers on GaAs substrates
-
- Yan, J. Y. (författare)
- Chinese Academy of Sciences
-
- Gong, Q. (författare)
- Chinese Academy of Sciences
-
- Yue, L. (författare)
- Chinese Academy of Sciences
-
visa fler...
-
- Liu, Q. B. (författare)
- Chinese Academy of Sciences
-
- Cheng, R. H. (författare)
- Qufu Normal University
-
- Cao, C. F. (författare)
- Chinese Academy of Sciences
-
- Wang, Y. (författare)
- Chinese Academy of Sciences
-
- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
visa färre...
-
(creator_code:org_t)
- Elsevier BV, 2013
- 2013
- Engelska.
-
Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 378, s. 141-144
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://research.cha...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations. (c) 2013 Elsevier B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- Molecular beam epitaxy
- optimization
- Semiconducting III-V
- materials
- Phosphides
- molecular-beam epitaxy
- Stresses
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas