Low temperature oxides deposited by remote plasma enhanced CVD

• A remote plasma enhanced chemical vapor deposition (RPECVD) process was used to prepare SiO2-Si structures at ~300°C. The best midgap interface trap densities, Ditm, as obtained by C-V techniques are 6-8×1010 cm-2eV-1 for SiO2-Si(100) and 2-3×1011 cm-2eV-1 for SiO2-Si(111)

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

integrated circuit technology

silicon

interface states

plasma CVD

capacitance

dielectric thin films

silicon compounds

electron traps

hole traps

elemental semiconductors

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)