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Physics of a disord...
Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements
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- Huang, J. (författare)
- University Of Oxford,University of Oxford, England
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- Alexander-Webber, J. A. (författare)
- University Of Oxford,University of Oxford, England
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- Baker, A. M. R. (författare)
- University Of Oxford,University of Oxford, England
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- Janssen, Tjbm (författare)
- National Physical Laboratory (NPL),National Phys Lab, England
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- Tzalenchuk, A.Y. (författare)
- Royal Holloway University of London,National Physical Laboratory (NPL),National Phys Lab, England; University of London, England,Chalmers, Sweden
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- Antonov, V. (författare)
- Royal Holloway University of London,University of London, England
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- Yager, Thomas, 1987 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lara Avila, Samuel, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
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- Kubatkin, Sergey, 1959 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Nicholas, R. J. (författare)
- University Of Oxford,University of Oxford, England
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(creator_code:org_t)
- American Physical Society, 2015
- 2015
- Engelska.
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969 .- 1098-0121 .- 1550-235X. ; 92:7
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Abstract
Ämnesord
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- We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magnetotransport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2-31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be 3.0-9.1x10(10) cm(-2) for our samples. A scattering asymmetry for electrons and holes is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder strength, in good agreement with quantum-mechanical numerical calculations.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Nyckelord
- Physics
- boron-nitride
- scattering
- transport
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Huang, J.
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Alexander-Webber ...
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Baker, A. M. R.
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Janssen, Tjbm
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Tzalenchuk, A.Y.
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Antonov, V.
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visa fler...
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Yager, Thomas, 1 ...
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Lara Avila, Samu ...
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Kubatkin, Sergey ...
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Yakimova, Rosits ...
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Nicholas, R. J.
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visa färre...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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Physical Review ...
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Chalmers tekniska högskola
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Linköpings universitet