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Wafer bonding stren...
Wafer bonding strength increased by mobile ions
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- Raeissi, Bahman, 1979 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sanz-Velasco, Anke, 1971 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Engström, Olof, 1943 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2009
- 2009
- Engelska.
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Ingår i: Proceeding of EUROSOI 2009. ; , s. 99-100
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
Stäng
- Mechanical bonding energies of oxygen plasma treated androom temperature wafer bonded silicon surfaces have beenmeasured as a function of storage time in parallel withmeasurements of electrical interface properties. We find that the surface energy increases with a time dependence similar to that of decreasing interface state concentration. The current versus voltage behaviour reveals the existence of mobile ions. We conclude that these mobile charges after reaction with the interface states give rise to the increased surface energy responsible for the bonding.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)