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Nonlinear response ...
Nonlinear response of a ballistic graphene transistor with an ac-driven gate: High harmonic generation and terahertz detection
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- Korniyenko, Yevgeniy, 1989 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Shevtsov, O. (författare)
- Northwestern University
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- Löfwander, Tomas, 1972 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2016
- 2016
- Engelska.
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 94:12
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Abstract
Ämnesord
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- We present results for time-dependent electron transport in a ballistic graphene field-effect transistor with an ac-driven gate. Nonlinear response to the ac drive is derived utilizing Floquet theory for scattering states in combination with Landauer-Buttiker theory for transport. We identify two regimes that can be useful for applications: (i) low and (ii) high doping of graphene under source and drain contacts, relative to the doping level in the graphene channel, which in an experiment can be varied by a back gate. In both regimes, inelastic scattering induced by the ac drive can excite quasibound states in the channel that leads to resonance promotion of higher-order sidebands. Already for weak to intermediate ac drive strength, this leads to a substantial change in the direct current between source and drain. For strong ac drive with frequency Omega, we compute the higher harmonics of frequencies n Omega (n integer) in the source-drain conductance. In regime (ii), we show that particular harmonics (for instance, n = 6) can be selectively enhanced by tuning the doping level in the channel or by tuning the drive strength. We propose that the device operated in the weak-drive regime can be used to detect THz radiation, while in the strong-drive regime, it can be used as a frequency multiplier.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
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