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Intersubband energi...
Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN
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- Akabli, H. (författare)
- Université Cadi Ayyad,Cadi Ayyad University
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- Almaggoussi, A. (författare)
- Université Cadi Ayyad,Cadi Ayyad University
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- Abounadi, A. (författare)
- Université Cadi Ayyad,Cadi Ayyad University
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- Rajira, A. (författare)
- Université Cadi Ayyad,Cadi Ayyad University
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- Berland, Kristian, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Thorvald, 1946 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Elsevier BV, 2012
- 2012
- Engelska.
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Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 52:1, s. 70-77
- Relaterad länk:
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http://dx.doi.org/10...
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yInyN/Ga1-xInxN quantum well structures. We have considered how material parameters such as non-parabolicity and the uncertainty in the bowing parameter affect E-12 and the corresponding wavelength, lambda(12). The calculations include strain and cover the transition range from telecommunication wavelengths (1.55 mu m) to the mid-infrared (similar to 10 mu m). Our results show that the transition energies of strain-free Al1-yInyN/Ga1-xInxN quantum well structures, which are lattice-matched to GaN (y = 17.7%, x = 0), resulted in wavelengths above similar to 2 mu m. To reach shorter wavelengths, we explored structures with other indium concentrations but maintaining a small mismatch to GaN. For similar to 1% lattice mismatch the wavelength lambda(12) could be reduced to less than 1.55 mu m. The results serve as a starting point for designing and epitaxial growth of photonic intersubband structures.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- AlN
- GaN
- Intersubband
- devices
- mu-m
- wurtzite semiconductors
- molecular-beam epitaxy
- laser-diodes
- GaInN
- Telecommunication wavelength
- wavelengths
- polarization
- AlInN
- Strain
- absorption
- growth
- multiple-quantum wells
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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