Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

• A multienergy oxygen ion implantation process wasdemonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = −4 V and Vds = 50 V and a maximum power added efficiency of 51.5% at Vgs = −4 V and Vds = 30 V at 3 GHz were demonstrated on HEMTs withoutfield plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhancedgate leakage due to the gate contacting the 2-D electron gas at themesa sidewall.

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