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Influence of the ch...
Abstract
Ämnesord
Stäng
- The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Field-effect transistors
- channel width
- threshold voltage modulation
- MOSFET
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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