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Impact of in situ N...
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
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- Ding Yuan, Chen, 1991 (författare)
- Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden
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- Persson, Axel (författare)
- Linköpings universitet,Linköping University,Tunnfilmsfysik,Tekniska fakulteten
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- Wen, Kai-Hsin, 1994 (författare)
- Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden
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- Sommer, Daniel (författare)
- United Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany
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- Grunenputt, Jan (författare)
- United Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany
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- Blanck, Herve (författare)
- United Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany
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- Thorsell, Mattias, 1982 (författare)
- Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Kordina, Olof (författare)
- SweGaN AB, Linkoping, Sweden
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden; Lund Univ, Sweden
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- Persson, Per O. A. (författare)
- Linköping University
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- Chen, Jr-Tai (författare)
- SweGaN AB, Linkoping, Sweden
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- Rorsman, Niklas, 1964 (författare)
- Chalmers University of Technology,Chalmers Univ Technol, Sweden
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(creator_code:org_t)
- 2022-01-25
- 2022
- Engelska.
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 37:3
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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https://lup.lub.lu.s...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Medicinteknik -- Medicinsk apparatteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Medical Engineering -- Medical Equipment Engineering (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
Nyckelord
- LPCVD
- traps
- GaN HEMTs
- microwave
- NH3 pretreatment
- high mobility field effect transistor
- structures
- GaN
- passivation
- SiNx
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Till lärosätets databas
- Av författaren/redakt...
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Ding Yuan, Chen, ...
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Persson, Axel
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Wen, Kai-Hsin, 1 ...
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Sommer, Daniel
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Grunenputt, Jan
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Blanck, Herve
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Thorsell, Mattia ...
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Kordina, Olof
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Darakchieva, Van ...
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Persson, Per O. ...
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Chen, Jr-Tai
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Rorsman, Niklas, ...
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- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Medicinteknik
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och Medicinsk appara ...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Kemi
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och Materialkemi
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Annan fysik
- Artiklar i publikationen
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Semiconductor Sc ...
- Av lärosätet
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Chalmers tekniska högskola
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Lunds universitet
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Linköpings universitet