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Ultra-broadband com...
Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth
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- Giannakopoulos, Stavros, 1989 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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Eriksson, Klas, 1983 (författare)
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Darwazeh, Izzat (författare)
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- He, Zhongxia Simon, 1984 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9782874870484
- 2017
- 2017
- Engelska.
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Ingår i: Microwave Integrated Circuits Conference (EuMIC), 2017 12th European. - 9782874870484 ; 2017-January
- Relaterad länk:
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https://research.cha...
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https://doi.org/10.2...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its on-chip measurements are reported. The multi-cell distributed amplifier uses four gain cells where each consists of a common collector input stage followed by a cascode gain stage. The chip includes bias, decoupling and terminating circuits for the dc and RF interconnects; it measures 0.72 mm by 0.4 mm. It consumes 210 mW of power and can deliver up to 5.5 dBm of output power at 195 GHz. The amplifier achieves an average gain of 13.5 dB with an overall bandwidth over 200 GHz and a ± 2 dB gain ripple. The measurements indicate that this is the widest band dc-coupled amplifier reported to date and has the highest bandwidth reported among non-cascaded distributed amplifiers.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Bandwidth
- Transmission line measurements
- Gain
- Indium phosphide
- Heterojunction bipolar transistors
- Frequency measurement
- III-V semiconductor materials
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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