SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "L4X0:0149 645X "

Search: L4X0:0149 645X

  • Result 1-2 of 2
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Norling, Martin, 1981, et al. (author)
  • A 2 GHz oscillator using a monolithically integrated AlN TFBAR
  • 2008
  • In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424417803 ; 1:1, s. 843-846
  • Conference paper (peer-reviewed)abstract
    • A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.
  •  
2.
  • Bagger, Reza, et al. (author)
  • 20-Watt LDMOS Power Amplifier IC for Linear Driver Application
  • 2007
  • Conference paper (peer-reviewed)abstract
    • This paper describes an LDMOS power amplifier integrated circuit for W-CDMA applications. The IC was developed with Infineon's Si LDMOS IC technology. The PA IC achieved 28.5 dB gain. When tuned for W-CDMA the IC showed 20 W PEP at IM3 = -30 dBc (two-tone), 400-MHz bandwidth (20%) around 2100 MHz, gain flatness of 0.15 dB/30 MHz, and phase flatness of 1 degree/30 MHz. The PA IC was characterized under all typical modulation formats, and is included in Infineon's product portfolio of power ICs for radio base stations.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-2 of 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view