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1.
  • Danilov, Andrey, 1961, et al. (author)
  • Single molecular devices with fullerenes and oligophenylenevinylene (OPV) derivatives
  • 2005
  • In: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST. - 078039268X ; , s. 481-484
  • Conference paper (peer-reviewed)abstract
    • We have studied low temperature electron transport in three terminal single molecule transistors. Devices with OPV revealed a relation between transistor characteristics and position of molecular redox potentials strongly influenced by proximity to the metal. Fullerene based devices demonstrate negative differential resistance and indicate strong coupling of fullerene to gold.
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2.
  • Wernersson, Lars-Erik, et al. (author)
  • Wrap-gated InAs nanowire field-effect transistor
  • 2005
  • In: International Electron Devices Meeting 2005. - 078039268X ; , s. 273-276
  • Conference paper (peer-reviewed)abstract
    • Field-effect transistors (FETs) based on semiconductor nanowires (Bryllert et al., 2005) have the potential to improve certain aspects of existing planar FET technologies. The possibility to form wrap-gates gives an efficient gate coupling resulting in reduced drain-induced barrier lowering. Furthermore, lateral strain relaxation allows a new freedom in combining materials in heterostructures, where materials with different lattice constants can be combined without defects (Bjork et al., 2002). Since the transistor channel, unlike the planar FETs, is vertical, heterostructures may be used to tailor the bandstructure along the direction of current flow. In this paper, we demonstrate a new technology to fabricate vertical nanowire FETs in a process that almost exclusively relies on optical lithography and standard III-V processing techniques. We measure encouraging electrical data, including current saturation at Vds ≡ 0.15 V (for Vg ≡ 0 V) and low voltage operation Vth ≡ -0.15 V, and present opportunities to improve the device performance by heterostructure design
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