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Search: L773:0878499431

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1.
  • Blumenau, A.T., et al. (author)
  • Density functional based modelling of 30° partial dislocations in SiC
  • 2004
  • In: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003. - Stafa-Zuerich : Trans Tech Publications Inc.. - 0878499431 ; , s. 453-456
  • Conference paper (peer-reviewed)abstract
    • Experiment has shown that 4H- and 6H-SiC pin diodes degrade rapidly during forward biased operation. This degradation is accompanied by the formation and expansion of stacking faults in the basal plane. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations. In our work we investigate the structure and properties of basal plane 30° Shockley partials in SiC by means of density functional based calculations. Barriers to their glide motion, and thus the expansion of the accompanying stacking fault is modelled in a process involving the formation and subsequent migration of kinks in the dislocation. In combination with an analysis of the electronic structure of the partials and stacking faults, this allows an identification of those types of partials which will be affected by the REDG mechanism in this model.
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2.
  • Iwata, Hisaomi P, et al. (author)
  • An ab initio study of intrinsic stacking faults in GaN
  • 2004
  • In: Materials Science Forum. - Stafa-Zuerich : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 457-460, s. 1617-1620, s. 1617-1620
  • Journal article (peer-reviewed)abstract
    • A first-principles study of intrinsic stacking faults in GaN is reported. Our calculations are based on density functional theory in local density approximation. We have found that the electron wave functions belonging to the conduction and valence band edge states tend to be localized almost exclusively on different sides of the faulted layer. We suggest that the electrostatic field caused by the macroscopically polarized 2H-GaN parts below and above a thin 3C-like layer around the stacking fault is responsible for these possibly shallow localized states.
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  • Result 1-2 of 2
Type of publication
conference paper (1)
journal article (1)
Type of content
peer-reviewed (2)
Author/Editor
Öberg, Sven (2)
Jones, R. (1)
Briddon, P. R. (1)
Frauenheim, T (1)
Blumenau, A.T. (1)
Briddon, Patrick R. (1)
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Iwata, Hisaomi P (1)
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University
Luleå University of Technology (2)
Linköping University (1)
Language
English (2)
Research subject (UKÄ/SCB)
Natural sciences (2)
Year
2004 (2)

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