SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "L773:142440116X "

Search: L773:142440116X

  • Result 1-1 of 1
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Östling, Mikael, et al. (author)
  • Device integration issues towards 10 nm MOSFETs
  • 2006
  • In: 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS. - NEW YORK, NY : IEEE. - 142440116X ; , s. 25-30
  • Conference paper (peer-reviewed)abstract
    • An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high K gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO(2)/Al(2)O(3). Low frequency noise properties for those devices are also analyzed. A selective SiGe epitaxy process for low resistivity source/drain contacts has been developed and implemented in pMOSFETs. A spacer pattering technology using optical lithography to fabricate sub 50 nm high-frequency MOSFETs and nanowires is demonstrated, Finally ultra thin body Sol devices with high mobility SiGe channels are demonstrated.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Östling, Mikael (1)
Malm, B. Gunnar (1)
Hållstedt, Julius (1)
Zhang, Zhen (1)
Zhang, Shili (1)
von Haartman, Martin (1)
show more...
Hellstrom, Per-Erik (1)
show less...
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2006 (1)

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view